A2G22S251-01S|Airfast RF Power GaN Transistor | NXP Semiconductors

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The A2G22S251-01SR3 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz.

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Data Sheet

Product Details

Features

High Terminal Impedances for Optimal Broadband Performance
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
1805 MHz	17.4	33.5	7.0	–34.7	–14
1990 MHz	17.3	34.3	7.1	–35.1	–11
2170 MHz	17.7	37.5	6.8	–33.2	–12

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Documentation

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2 documents

Compact List

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet[A2G22S251-01S]

PDFMay 16, 2016Rev 0

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins[SOT1828-1]

PDFJan 19, 2016Rev C

Design Resources

Design Files

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1-5of 6 design files

Models
A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019291.5 KBA2G22S251_01S_MDL_ADS

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Models
A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016739.5 KBA2G22S251_01S_MDL_AWR

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
A2G22S251-01S S-Parameters

S2PRev 0May 16, 2016238.4 KBA2G22S251-01S_SP

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Printed Circuit Boards and Schematics
A2G22S251-01S 2000 MHz PCB DXF file

ZIPRev 2May 16, 2016100.4 KBA2G22S251-01S_2000_PCB

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1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2000 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet[A2G22S251-01S]

Package Information (1)

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins[SOT1828-1]

Filter by

Data Sheet (1)

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet[A2G22S251-01S]

Package Information (1)

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins[SOT1828-1]

Design Resources

Design Files

Filter by

A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2G22S251-01S S-Parameters

A2G22S251-01S 2000 MHz PCB DXF file

Filter by

Filter By

A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2G22S251-01S S-Parameters

A2G22S251-01S 2000 MHz PCB DXF file

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1805-2200 MHz, 48 W Avg., 48 V Airfast^® RF Power GaN Transistor