Product Details

Features

Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Optimized for Doherty applications
RoHS compliant

RF Performance Tables

1800 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 800 mA, P_out = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
1805 MHz	18.0	35.3	6.9	–34.5	–18
1840 MHz	18.1	34.4	6.8	–34.7	–19
1880 MHz	17.6	34.2	6.7	–34.3	–12

1900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 800 mA, P_out = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
1930 MHz	17.8	31.2	6.8	–34.6	–16
1960 MHz	18.3	31.7	6.8	–34.4	–22
1995 MHz	18.6	32.8	6.8	–34.0	–14

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Die Technology
A2T18S166W12S Data Sheet			End of Life	1805	1995	28	LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet[A2T18S166W12S]

PDFApr 30, 2018Rev 0

98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins[SOT1785-1]

PDFFeb 24, 2016Rev B

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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2 design files

Models
A2T18S166W12S S-Parameters

S2PRev 0Apr 30, 201868.4 KBA2T18S166W12S-SP

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Printed Circuit Boards and Schematics
A2T18S166W12S 1800 MHz PCB DXF file

ZIPRev 1Apr 30, 201832.0 KBA2T18S166W12S-1800-PCB

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1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

1800 MHz

1900 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet[A2T18S166W12S]

Package Information (1)

98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins[SOT1785-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet[A2T18S166W12S]

Package Information (1)

98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins[SOT1785-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A2T18S166W12S S-Parameters

A2T18S166W12S 1800 MHz PCB DXF file

Filter by

Filter By

A2T18S166W12S S-Parameters

A2T18S166W12S 1800 MHz PCB DXF file

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1805-1995 MHz, 38 W Avg., 28 V Airfast^® RF Power LDMOS Transistor