Data Sheet (1)
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N-channel dual gate MOSFET[BF1217WR]
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Enhancement type N-channel dual gate Field-Effect Transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1217WR is encapsulated in a plastic SOT343R package.
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Part | CAD Model | VDS [max] (V) | ID [max] (mA) | IDS [max] (mA) | Coss [typ] |
---|---|---|---|---|---|
6 | 30 | 24 | 0.8 |
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