Design Files
Receive the full breakdown. See the product footprint and more in the eCad file.
- No Longer Manufactured
- MMRF1008H
960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image
Product Details
Features
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
- Power Gain: 20.3 dB
- Drain Efficiency: 65.5%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
- Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
- Power Gain: 19.8 dB
- Drain Efficiency: 58%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
Buy/Parametrics
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Documentation
Quick reference to our documentation types.
4 documents
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Package Information
98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins
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Package Information
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins
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Package Information
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins
