920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MDE6IC9120NR1 and MDE6IC9120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 920 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Data Sheet

Application Notes

Product Details

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1A = I_DQ1B = 90 mA, I_DQ2A = 550 mA, V_G2B = 1.6 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	32.5	38.4	6.6	–39.0
940 MHz	32.0	38.0	6.7	–40.4
960 MHz	31.3	37.7	7.0	–39.6

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 120 Watts CW Pout
Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW

Documentation

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1-5 of 6 documents

Data Sheet
MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

PDFRev 0Nov 12, 2009331.7 KBMDE6IC9120NEnglish
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
Package Information
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

PDFRev EMar 18, 201682.7 KBSOT1725-1English
Package Information
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

PDFRev EMar 18, 201677.7 KBSOT1728-1English

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Design Resources

Design Files

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3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MDE6IC9120N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:001.5 MBMDE6IC9120N_MDL_ADS

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Models
MDE6IC9120NR1, MDE6IC9120GNR1 S-parameters

S2PRev 0Oct 20, 2009 00:00:0068.5 KBMDE6IC9120N_SP

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Product Details

RF Performance Table

900 MHz

Documentation

Filter by

MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

Design Resources

Design Files

Filter by

MDE6IC9120N RF High-Power Model ADS Product Model Design Kit

MDE6IC9120NR1, MDE6IC9120GNR1 S-parameters

RF High Power Model ADS Model Kit goto: Click the Download button to select.

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