MWE6IC9100N|865-960 MHz, 100 W, 26 V | NXP Semiconductors

865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers

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N true 0 PSPMWE6IC9100Nen 10 Application Note Application Note t789 5 Data Sheet Data Sheet t520 2 Package Information Package Information t790 2 White Paper White Paper t530 1 en_US en_US en Data Sheet Data Sheet 2 1 6 English The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. 1317760744458723374559 PSP 1.1 MB None None documents None 1317760744458723374559 /docs/en/data-sheet/MWE6IC9100N-2.pdf 1133872 /docs/en/data-sheet/MWE6IC9100N-2.pdf MWE6IC9100N-2 documents N 2011-10-04 MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier /docs/en/data-sheet/MWE6IC9100N-2.pdf /docs/en/data-sheet/MWE6IC9100N-2.pdf Data Sheet N 980000996212993340 2022-12-07 pdf en Oct 31, 2011 980000996212993340 Data Sheet Y N MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier 2 4.1 English The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. 1317760744919722653228 PSP 1.1 MB None None documents None 1317760744919722653228 /docs/en/data-sheet/MWE6IC9100N-1.pdf 1136581 /docs/en/data-sheet/MWE6IC9100N-1.pdf MWE6IC9100N-1 documents N 2011-10-04 MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier /docs/en/data-sheet/MWE6IC9100N-1.pdf /docs/en/data-sheet/MWE6IC9100N-1.pdf Data Sheet N 980000996212993340 2022-12-07 pdf en Oct 31, 2011 980000996212993340 Data Sheet Y N MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier Application Note Application Note 5 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 5 0 English Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 1149802174784738095879 PSP 8.3 MB None None documents None 1149802174784738095879 /docs/en/application-note/AN3263.pdf 8285724 /docs/en/application-note/AN3263.pdf AN3263 documents N N 2016-10-31 Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3263.pdf /docs/en/application-note/AN3263.pdf Application Note N 645036621402383989 2022-12-07 pdf N en Jun 7, 2006 645036621402383989 Application Note Y N Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 6 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 7 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 Package Information Package Information 2 8 B English 98ASA10650D, 1618-02, 14 Lead TO-270 Wide Body 1128707279103707732108 PSP 72.7 KB None None documents None 1128707279103707732108 /docs/en/package-information/98ASA10650D.pdf 72681 /docs/en/package-information/98ASA10650D.pdf SOT1720-2 documents N N 2016-10-31 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins /docs/en/package-information/98ASA10650D.pdf /docs/en/package-information/98ASA10650D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 18, 2016 302435339416912908 Package Information D N 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins 9 B English 98ASA10649D, 1617-02, TO-272, 14 Lead 1137624297299717546302 PSP 71.4 KB None None documents None 1137624297299717546302 /docs/en/package-information/98ASA10649D.pdf 71414 /docs/en/package-information/98ASA10649D.pdf SOT1721-1 documents N N 2016-10-31 98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins /docs/en/package-information/98ASA10649D.pdf /docs/en/package-information/98ASA10649D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins White Paper White Paper 1 10 0 English Improved performance in 2nd generation Airfast<sup>&#174;</sup> RFICS provide PA designers compact, cost-effective device solutions for next generation base stations. 1431960797038715181022 PSP 167.4 KB None None documents None 1431960797038715181022 /docs/en/white-paper/AIRFASTWBFWP.pdf 167378 /docs/en/white-paper/AIRFASTWBFWP.pdf AIRFASTWBFWP documents N N 2016-10-31 Advances in Airfast RFICs White Paper /docs/en/white-paper/AIRFASTWBFWP.pdf /docs/en/white-paper/AIRFASTWBFWP.pdf White Paper N 918633085541740938 2024-02-09 pdf N en May 15, 2015 918633085541740938 White Paper Y N Advances in Airfast RFICs White Paper false 0 MWE6IC9100N downloads en true 1 Y PSP Application Note 5 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 /docs/en/application-note/AN3263.pdf 2016-10-31 1149802174784738095879 PSP 5 Jun 7, 2006 Application Note Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages None /docs/en/application-note/AN3263.pdf English documents 8285724 None 645036621402383989 2022-12-07 N /docs/en/application-note/AN3263.pdf Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3263.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 8.3 MB AN3263 N 1149802174784738095879 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 6 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 7 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 Data Sheet 2 /docs/en/data-sheet/MWE6IC9100N-2.pdf 2011-10-04 1317760744458723374559 PSP 1 Oct 31, 2011 Data Sheet The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. None /docs/en/data-sheet/MWE6IC9100N-2.pdf English documents 1133872 None 980000996212993340 2022-12-07 /docs/en/data-sheet/MWE6IC9100N-2.pdf MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier /docs/en/data-sheet/MWE6IC9100N-2.pdf documents 980000996212993340 Data Sheet N en None Y pdf 6 N MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier 1.1 MB MWE6IC9100N-2 N 1317760744458723374559 /docs/en/data-sheet/MWE6IC9100N-1.pdf 2011-10-04 1317760744919722653228 PSP 2 Oct 31, 2011 Data Sheet The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. None /docs/en/data-sheet/MWE6IC9100N-1.pdf English documents 1136581 None 980000996212993340 2022-12-07 /docs/en/data-sheet/MWE6IC9100N-1.pdf MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier /docs/en/data-sheet/MWE6IC9100N-1.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4.1 N MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier 1.1 MB MWE6IC9100N-1 N 1317760744919722653228 Package Information 2 /docs/en/package-information/98ASA10650D.pdf 2016-10-31 1128707279103707732108 PSP 8 Mar 18, 2016 Package Information 98ASA10650D, 1618-02, 14 Lead TO-270 Wide Body None /docs/en/package-information/98ASA10650D.pdf English documents 72681 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10650D.pdf 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins /docs/en/package-information/98ASA10650D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins 72.7 KB SOT1720-2 N 1128707279103707732108 /docs/en/package-information/98ASA10649D.pdf 2016-10-31 1137624297299717546302 PSP 9 Feb 26, 2016 Package Information 98ASA10649D, 1617-02, TO-272, 14 Lead None /docs/en/package-information/98ASA10649D.pdf English documents 71414 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10649D.pdf 98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins /docs/en/package-information/98ASA10649D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins 71.4 KB SOT1721-1 N 1137624297299717546302 White Paper 1 /docs/en/white-paper/AIRFASTWBFWP.pdf 2016-10-31 1431960797038715181022 PSP 10 May 15, 2015 White Paper Improved performance in 2nd generation Airfast<sup>&#174;</sup> RFICS provide PA designers compact, cost-effective device solutions for next generation base stations. None /docs/en/white-paper/AIRFASTWBFWP.pdf English documents 167378 None 918633085541740938 2024-02-09 N /docs/en/white-paper/AIRFASTWBFWP.pdf Advances in Airfast RFICs White Paper /docs/en/white-paper/AIRFASTWBFWP.pdf documents 918633085541740938 White Paper N en None Y pdf 0 N N Advances in Airfast RFICs White Paper 167.4 KB AIRFASTWBFWP N 1431960797038715181022 true Y Products

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