860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On-Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N–CDMA and W–CDMA.

Data Sheet

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Data Sheet
MW4IC915NBR1, MW4IC915GNBR1 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

PDFRev 8Mar 31, 2011972.4 KBMW4IC915NEnglish
Application Note
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
Application Note
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
Application Note
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Jun 7, 20068.3 MBAN3263English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
Package Information
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins

PDFRev RFeb 29, 201681.8 KBSOT1727-1English
Package Information
98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic

PDFRev FJun 30, 200760.7 KBSOT1724-1English

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860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Documentation

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MW4IC915NBR1, MW4IC915GNBR1 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins

98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic

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