MRF8P29300H|320 W Pulse, 2700-2900 MHz, 30 | NXP Semiconductors

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2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

MRF8P29300H
No Longer Manufactured
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8P29300HR6 and MRF8P29300HSR6 are RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications.

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Product Details

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

RF Performance Table

Typical Pulse Performance

VDD = 30 Volts, IDQ = 100 mA
Signal Type Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)		 IRL
(dB)
Pulse (100 µsec,
10% Duty Cycle)		 320 Peak290013.350.5–17
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)

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MRF8P29300H
Data Sheet

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N true 0 PSPMRF8P29300Hen 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 en_US en_US en Data Sheet Data Sheet 1 1 0 English RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. 1298582985656716942870 PSP 1.1 MB None None documents None 1298582985656716942870 /docs/en/data-sheet/MRF8P29300H.pdf 1093273 /docs/en/data-sheet/MRF8P29300H.pdf MRF8P29300H documents N N 2016-10-31 ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF8P29300H.pdf /docs/en/data-sheet/MRF8P29300H.pdf Data Sheet N 980000996212993340 2024-02-09 pdf N en Feb 24, 2011 980000996212993340 Data Sheet Y N ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs Package Information Package Information 2 2 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 3 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins false 0 MRF8P29300H downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRF8P29300H.pdf 2016-10-31 1298582985656716942870 PSP 1 Feb 24, 2011 Data Sheet RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. None /docs/en/data-sheet/MRF8P29300H.pdf English documents 1093273 None 980000996212993340 2024-02-09 N /docs/en/data-sheet/MRF8P29300H.pdf ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF8P29300H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs 1.1 MB MRF8P29300H N 1298582985656716942870 Package Information 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 2 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 3 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 true Y Products

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