MRF6S24140H|140 W CW, 2450 MHz, 28 V

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The MRF6S24140HR3 and MRF6S24140HSR3 are designed primarily for large-signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications.

Data Sheet

Documentation

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3 documents

^{Data Sheet}
MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs

PDFRev 4Feb 23, 2012400.0 KBMRF6S24140HEnglish
^{Package Information}
98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins

PDFRev FMar 1, 201641.4 KBSOT1789-1English
^{Package Information}
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins

PDFRev GFeb 4, 201647.3 KBSOT1788-1English

Design Resources

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1 design file

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MRF6S24140H, MRF6S24140HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:001.4 MBMRF6S24140H_MDL_AWR
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2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs

Documentation

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MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs

98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins

98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins

Design Resources

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MRF6S24140H, MRF6S24140HS RF High-Power Model AWR Product Model Design Kit

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