1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

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The MRF6S19060NR1 and MRF6S19060NBR1 are designed for N–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

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1-5 of 6 documents

^{Data Sheet}
MRF6S19060NR1, MRF6S19060NBR1 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

PDFRev 5Dec 27, 2010954.8 KBMRF6S19060NEnglish
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Application Note}
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Jun 7, 20068.3 MBAN3263English
^{Package Information}
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins

PDFRev FMar 17, 201673.4 KBSOT1735-1English
^{Package Information}
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins

PDFRev FJan 18, 201675.9 KBSOT1736-1English

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1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

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MRF6S19060NR1, MRF6S19060NBR1 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins

98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins

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