1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MD7IC18120NR1 and MD7IC18120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 1880 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Data Sheet

Application Notes

Documentation

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1-5 of 6 documents

Data Sheet
MD7IC18120NR1, MD7IC18120GNR1 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

PDFRev 0May 3, 2010617.1 KBMD7IC18120NEnglish
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
Package Information
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

PDFRev EMar 18, 201682.7 KBSOT1725-1English
Package Information
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

PDFRev EMar 18, 201677.7 KBSOT1728-1English

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Design Resources

Design Files

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5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MD7IC18120NR1, MD7IC18120GNR1 S-Parameters

S2PRev 0May 3, 2010 00:00:0054.2 KBMD7IC18120N_SP

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Models
MD7IC18120N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:002.2 MBMD7IC18120N_MDL_ADS

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
MD7IC18120N RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:003.0 MBMD7IC18120N_MDL_AWR

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Calculators
MD7IC18120NR1, MD7IC18120GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 19, 2011 00:00:0026.5 KBMD7IC18120N_MTTF_CALC

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1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Documentation

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MD7IC18120NR1, MD7IC18120GNR1 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

Design Resources

Design Files

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MD7IC18120NR1, MD7IC18120GNR1 S-Parameters

MD7IC18120N RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MD7IC18120N RF High-Power Model AWR Product Model Design Kit

MD7IC18120NR1, MD7IC18120GNR1 RF Power Electromigration MTTF Calculation Program

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