1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MD7IC18120NR1 and MD7IC18120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 1880 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Data Sheet

Application Notes

Documentation

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1-5 of 6 documents

^{Data Sheet}
MD7IC18120NR1, MD7IC18120GNR1 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

PDFRev 0May 3, 2010617.1 KBMD7IC18120NEnglish
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

PDFRev EMar 18, 201682.7 KBSOT1725-1English
^{Package Information}
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

PDFRev EMar 18, 201677.7 KBSOT1728-1English

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Design Resources

Design Files

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5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MD7IC18120NR1, MD7IC18120GNR1 S-Parameters

S2PRev 0May 3, 2010 00:00:0054.2 KBMD7IC18120N_SP
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^Models
MD7IC18120N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:002.2 MBMD7IC18120N_MDL_ADS
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^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
MD7IC18120N RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:003.0 MBMD7IC18120N_MDL_AWR
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^Calculators
MD7IC18120NR1, MD7IC18120GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 19, 2011 00:00:0026.5 KBMD7IC18120N_MTTF_CALC
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1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Documentation

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MD7IC18120NR1, MD7IC18120GNR1 1805-1880 MHz, 30 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins

Design Resources

Design Files

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MD7IC18120NR1, MD7IC18120GNR1 S-Parameters

MD7IC18120N RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MD7IC18120N RF High-Power Model AWR Product Model Design Kit

MD7IC18120NR1, MD7IC18120GNR1 RF Power Electromigration MTTF Calculation Program

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