MMRF1021N|136-941 MHz, 7 W, 7.5 V

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The MMRF1021NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld military radio equipment.

Data Sheet

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3 documents

^{Data Sheet}
MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

PDFRev 0Jul 24, 2014958.4 KBMMRF1021NEnglish
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

PDFRev AFeb 15, 201655.3 KBSOT1811-2English

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136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor

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MMRF1021NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins

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