Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
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Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
12NC: 934055586115
Details
Order
Parameter | Value |
---|---|
Number of pins | 4 |
Package Style | SO |
@f [max] (MHz) | 1800 |
NF (dB) | 1.3 |
@f [min] (MHz) | 900 |
NF (dB) | 1.3 |
@f [max] (MHz) | 1800 |
Security Status | COMPANY PUBLIC |
Description | Silicon MMIC amplifier |
Noise Figure (Typ) (dB) | 1.3 |
Input 3rd Order Intercept (dBm) | -4.5, -7.4 |
Voltage on bus pins [max] | 4.5 |
Power Gain (dB) @ f (MHz) | 14 @ 1800, 18 @ 900 |
@ICC [typ] (mA) | 4, 4 |
Parameter | Value |
---|---|
NF (dB) | 1.3, 1.3 |
IP3i (dBm) | -4.5, -7.4 |
NF @Gp= 5 dB (dB) | 1.3 |
Input 3rd Order Intercept (Typ) (dBm) @ f (MHz) | -4.5 @ 1800, -7.4 @ 900 |
Gain (Typ) (dB) @ f (MHz) | 14 @ 1800, 18 @ 900 |
NF [typ] (dB) | 1.3, 1.3 |
Gass (dB) | 14, 18 |
Noise Figure (Typ) (dB) @ f (MHz) | 1.3 @ 1800, 1.3 @ 900 |
Gconv [typ] (dB) | 14, 18 |
Gp (dB) | 18 |
Gp (dB) | 14 |
NXP_Gp [typ] (dB) | 14, 18 |
@f | 0.90000004, 1.8000001 |
Input 3rd Order Intercept (dBm) | -4.5, -7.4 |
Part/12NC | PbFree | EU RoHS | Halogen Free | RHF Indicator | REACH SVHC | Weight (mg) |
---|---|---|---|---|---|---|
BGA2001,115(934055586115) | Yes | Yes | Yes | REACH SVHC | 5.866087648548578 |
Part/12NC | Safe Assure Functional Safety | Moisture Sensitivity Level (MSL) | Peak Package Body Temperature (PPT) (C°) | ||
---|---|---|---|---|---|
Lead Soldering | Lead Free Soldering | Lead Soldering | Lead Free Soldering | ||
BGA2001,115 (934055586115) | No | 1 | 1 | 240 | 260 |
Part/12NC | Harmonized Tariff (US)Disclaimer |
---|---|
BGA2001,115 (934055586115) | 854233 |
Archived content is no longer updated and is made available for historical reference only.
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing.