AFV141KHS Product Information|NXP

AFV141KHS

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AFV141KHS

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
1400
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.018000001
P1dB (Typ) (dBm)
60
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1200, 1400
Efficiency (Typ) (%)
52.1
Frequency Band (Hz)
1200000000, 1400000000
ParameterValue
Description
Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V
fi(RF) [min] (MHz)
1200
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1000 @ Peak
P1dB (Typ) (W)
1000
Gain (Typ) (dB)
17.7
Power Gain (Typ) (dB) @ f (MHz)
17.7 @ 1400
Frequency (Max) (MHz)
1400
Frequency (Min) (MHz)
1200
Frequency (Min-Max) (GHz)
1.2 to 1.4000001
frange [max] (MHz)
1400
frange [min] (MHz)
1200
Rth(j-a) (K/W)
0.018000001
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

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More about AFV141KH

These RF power devices, AFV141KH, AFV141KHS and AFV141KGS, are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L-Band radars. The devices are suitable for use in pulse applications.