A2I35H060GN Product Information|NXP

A2I35H060GN

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A2I35H060GN

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
3800
Number of pins
17
Package Style
DFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.7
P1dB (Typ) (dBm)
46.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
3400, 3800
Efficiency (Typ) (%)
32.4
Peak Power (Typ) (W)
65
Frequency Band (Hz)
3400000000, 3800000000
ParameterValue
Description
Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
fi(RF) [min] (MHz)
3400
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
10 @ AVG
P1dB (Typ) (W)
48
Gain (Typ) (dB)
24
Power Gain (Typ) (dB) @ f (MHz)
24 @ 3500
Frequency (Max) (MHz)
3800
Frequency (Min) (MHz)
3400
Frequency (Min-Max) (GHz)
3.4 to 3.8000002
frange [max] (MHz)
3800
frange [min] (MHz)
3400
Rth(j-a) (K/W)
1.7
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
48.1

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More about A2I35H060N

The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 3400 to 3800 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.