Model 11 | NXP Semiconductors

Model 11

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Software Details

Features

  • Mobility reduction
  • Bias-dependent series resistance
  • Velocity saturation
  • Conductance effects (CLM, DIBL, etc.)
  • Gate leakage current
  • Gate-induced drain leakage
  • Gate depletion
  • Quantum-mechanical effects
  • Bias-dependent overlap capacitances
Y true 0 SSPMODEL11en 1 Supporting Information Supporting Information t531 1 en_US en_US en Supporting Information Supporting Information 1 1 0.0 English 1446749756506720288093 SSP 1.6 MB None None documents None 1446749756506720288093 /docs/en/nxp/supporting-information/m1101.pdf 1572698 /docs/en/nxp/supporting-information/m1101.pdf M1101 documents N N 2023-04-28 MOS Model 11, level 1101 /docs/en/nxp/supporting-information/m1101.pdf /docs/en/nxp/supporting-information/m1101.pdf Supporting Information N 371282830530968666 2023-07-24 pdf N en Nov 6, 2015 371282830530968666 Supporting Information Y N MOS Model 11, level 1101 false 0 MODEL11 downloads en true 1 Y SSP Supporting Information 1 /docs/en/nxp/supporting-information/m1101.pdf 2023-04-28 1446749756506720288093 SSP 1 Nov 6, 2015 Supporting Information None /docs/en/nxp/supporting-information/m1101.pdf English documents 1572698 None 371282830530968666 2023-07-24 N /docs/en/nxp/supporting-information/m1101.pdf MOS Model 11, level 1101 /docs/en/nxp/supporting-information/m1101.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0.0 N N MOS Model 11, level 1101 1.6 MB M1101 N 1446749756506720288093 true Y Softwares

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