New Airfast GaN RF Transistor Brings a Flood of Innovative Design Ideas

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NXP is excited to announce the A3G26D055N, the first of our leading-edge product lines for mid-power discrete Gallium Nitride (GaN) solutions. The Airfast GaN A3G26D055N is a 55 W peak GaN discrete transistor, housed in a compact DFN 7 x 6.5 mm over-molded plastic package. This device has an unmatched output to fill multiple frequency bands and exceeds over 50% efficiency and over 13 dB of gain with operation at 48 V.

Versatile GaN Solution for Various Markets

The A3G26D055N is versatile in that its applications range from 100-2800 MHz and can be used across various markets. These markets include cellular infrastructure, RF Energy and wideband communications.

Within our RF 5G cellular infrastructure high-power portfolio, this sub-6 GHz A3G26D055N device operates in the 2.6 GHz cellular band, at 39 dBm and at 8 W average power. It can be used for 5G massive MIMO radio units (64T64R) as well as for under 1 GHz cellular bands as a driver for macro radio units such as 4T4R antenna systems.

Solid state RF energy is a reliable heat and power source. Our A3G26D055N device is versatile for use in the 2.45 GHz ISM band as an RF energy driver for cooking, industrial heating and welding. In addition, it can be used as a low-power final-stage in the lineup at 25 W CW for medical and industrial applications.

This new A3G26D055N device is also well suited for wideband communications that typically operate under demanding conditions. Examples include wideband tactical communications within the 100-2800 MHz range, as well as a 25 W CW wideband low-power final-stage or as a driver for the MMRF5014H or MMRF5018H products within our aerospace and defense portfolio.

Want More Information? Access Our Website.

The A3G26D055NT4 is available now for ordering and sampling through our Exclusive Sample Program. Please visit our website to access the product summary page and datasheet.

An extensive set of reference circuits is available to enable faster time to market. These compact designs cover power and frequencies to support a wide range of applications.

Tags: 5G, Communication Infrastructure, Connectivity, Industrial, Technologies

Author

Megan Faust

Megan Faust

Tactical Marketer Radio Power Solutions, NXP Semiconductors

Megan is the Tactical Marketer for NXP's Radio Power Solutions Marketing Team at NXP Semiconductors. Megan Faust has worked with NXP in collaborating with both teams in RF Cellular Infrastructure and Multi-Market. NXP RP applications include SiGe, LDMOS and GaN RF solution designs for mobile and communication infrastructure as well as consumer, industrial and aerospace/defense. The NXP Radio Power marketing team is focused on making RF easier to use, to enable customers and address new market segments. Megan is responsible for the logistics, operations and distribution support for RF devices and evaluation boards. While also enabling innovation and marketing development for NXP Radio Power. Megan has earned a Bachelor of Arts degree in Business and is certified in Applied Business Data Analytics from Arizona State University.