AFT05MS003N|3 W CW, 1.8-941 MHz, 7.5 V | NXP Semiconductors

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3 W CW over 1.8-941 MHz, 7.5 V Wideband RF Power LDMOS Transistor

AFT05MS003N
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The AFT05MS003N is designed for handheld two-way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

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RF Performance Tables

Wideband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Pin
(dBm)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
136-174(1,4)17.817.167.13.2
350-520(2,4)20.015.173.03.2

Narrowband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
520(3)20.868.33.0

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(dBm)		 Test
Voltage		 Result
520(3)CW> 65:1
at all Phase
Angles		21.19.0No
Device
Degradation
1. Measured in 136-174 MHz VHF broadband reference circuit.
2. Measured in 350-520 MHz UHF broadband reference circuit.
3. Measured in 520 MHz narrowband production test circuit.
4. The values shown are the center band performance numbers across the indicated frequency range.
N true 0 PSPAFT05MS003Nen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English AFT05MS003N 3 W CW over 1.8-941 MHz, 7.5 V high gain, rugged RF power LDMOS transistor for handheld 2-way radio and machine to machine applications 1438984995982712744213 PSP 1.3 MB None None documents None 1438984995982712744213 /docs/en/data-sheet/AFT05MS003N.pdf 1252723 /docs/en/data-sheet/AFT05MS003N.pdf AFT05MS003N documents N N 2016-10-31 ARCHIVED - 3 W CW, 1.8-941 MHz, 7.5 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/AFT05MS003N.pdf /docs/en/data-sheet/AFT05MS003N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 7, 2015 980000996212993340 Data Sheet Y N ARCHIVED - 3 W CW, 1.8-941 MHz, 7.5 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet false 0 AFT05MS003N downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/AFT05MS003N.pdf 2016-10-31 1438984995982712744213 PSP 1 Aug 7, 2015 Data Sheet AFT05MS003N 3 W CW over 1.8-941 MHz, 7.5 V high gain, rugged RF power LDMOS transistor for handheld 2-way radio and machine to machine applications None /docs/en/data-sheet/AFT05MS003N.pdf English documents 1252723 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT05MS003N.pdf ARCHIVED - 3 W CW, 1.8-941 MHz, 7.5 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/AFT05MS003N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - 3 W CW, 1.8-941 MHz, 7.5 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet 1.3 MB AFT05MS003N N 1438984995982712744213 true Y Products

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