NPN 2 GHz wideband transistor

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It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 μA to 1mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.

See product image

Product Details

Features

High transition frequency
Low noise

Target Applications

Low power RF amplifiers
Paging systems
Pocket phones

Documentation

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2 documents

^{Package Information}
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

PDFRev 1.1Jan 9, 2017200.2 KBSOT23English
^{Supporting Information}
Reflow Soldering Profile

PDFRev 1.0Feb 17, 201434.6 KBREFLOW_SOLDERING_PROFILEEnglish

Design Resources

Design Files

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5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
BFT25C SPICE model

S2PRev 1.3Jul 22, 2012 00:00:002.0 KBBFT25C
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^Models
BFT25D SPICE model

S2PRev 1.3Jul 22, 2012 00:00:002.0 KBBFT25D
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BFT25B SPICE model

S2PRev 1.3Jul 22, 2012 00:00:002.0 KBBFT25B
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BFT25A SPICE model

S2PRev 1.3Jul 22, 2012 00:00:002.0 KBBFT25A_1
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S-parameters BFT25

ZIPRev 1.0Apr 23, 2019 00:00:008.2 KBSPAR_BFT25
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NPN 2 GHz wideband transistor

Product Details

Features

Target Applications

Documentation

Filter by

plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

Reflow Soldering Profile

Design Resources

Design Files

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BFT25C SPICE model

BFT25D SPICE model

BFT25B SPICE model

BFT25A SPICE model

S-parameters BFT25

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