A3G26H350W17S|2496-2690 MHz, 59 W Avg, 48 V | NXP Semiconductors

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This A3G26H350W17S 59 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside these frequencies.

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Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
RoHs compliant

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 48 Vdc, I_DQA = 250 mA, V_GSB = -5.5 Vdc, P_out = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2496 MHz	13.3	49.9	8.9	-33.2
2590 MHz	13.5	48.5	9.1	-37.2
2690 MHz	13.3	48.5	8.9	-34.5

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A3G26H350W17S Data Sheet			End of Life	2496	2690	48	56.2	420	GaN

Documentation

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2 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet[A3G26H350W17S]

PDFJan 20, 2021Rev 1

Design Resources

Design Files

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4 design files

Models
A3G26H350W17S Peaking Class AB S-Parameters

S2PRev 0Nov 12, 202022.7 KBA3G26H350W17S-PEAKING-CLASS-AB

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Models
A3G26H350W17S Carrier Class AB S-Parameters

S2PRev 0Nov 12, 202022.7 KBA3G26H350W17S-CARRIER-CLASS-AB

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A3G26H350W17S Peaking Class C S-Parameters

S2PRev 0Nov 12, 202022.7 KBA3G26H350W17S-PEAKING-CLASS-C

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Printed Circuit Boards and Schematics
A3G26H350W17S 2600 MHz PCB DXF file

ZIPRev 3Nov 12, 202037.6 KBA3G26H350W17S-2600-PCB

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2496-2690 MHz, 59 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2600 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet[A3G26H350W17S]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G26H350W17S 2496-2690 MHz, 59 W Avg, 48 V Data Sheet[A3G26H350W17S]

Design Resources

Design Files

Filter by

A3G26H350W17S Peaking Class AB S-Parameters

A3G26H350W17S Carrier Class AB S-Parameters

A3G26H350W17S Peaking Class C S-Parameters

A3G26H350W17S 2600 MHz PCB DXF file

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Filter By

A3G26H350W17S Peaking Class AB S-Parameters

A3G26H350W17S Carrier Class AB S-Parameters

A3G26H350W17S Peaking Class C S-Parameters

A3G26H350W17S 2600 MHz PCB DXF file

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2496-2690 MHz, 59 W Avg., 48 V Airfast^® RF Power LDMOS Transistor