A5G26H605W19N | 2496–2690 MHz, 85 W Avg, 48 V

A5G26H605W19N | 2496–2690 MHz, 85 W Avg, 48 V | NXP Semiconductors

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This A5G26H605W19N 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Plastic package
RoHS compliant

RF Performance Table

2600 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 300 mA, V_GSB = –5.4 Vdc, P_out = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2620 MHz	15.1	52.5	8.4	–30.0
2655 MHz	15.3	52.3	8.2	–31.0
2690 MHz	15.0	52.1	8.1	–32.0

1. All data measured with device soldered to NXP reference circuit.

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A5G26H605W19N Data Sheet			Active	2496	2690	48	57.95	624	GaN

Documentation

Quick reference to our documentation types.

4 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A5G26H605W19N 2496–2690 MHz, 85 W Avg, 48 V Data Sheet[A5G26H605W19N]

PDFDec 21, 2023Rev 1

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

PDFMay 16, 2024Rev 0

Design Resources

Design Files

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4 design files

Models
A5G26H605W19N Peaking Class AB S-Parameters

S2PRev 0Oct 25, 2023155.0 KBA5G26H605W19N-Peaking-Class-AB

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Models
A5G26H605W19N Peaking Class C S-Parameters

S2PRev 0Oct 25, 2023155.0 KBA5G26H605W19N-Peaking-Class-C

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Models
A5G26H605W19N Carrier Class AB S-Parameters

S2PRev 0Oct 25, 2023155.4 KBA5G26H605W19N-Carrier-Class-AB

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Printed Circuit Boards and Schematics
A5G26H605W19N 2600 MHz PCB DXF file

ZIPRev 2Oct 25, 202358.6 KBA5G26H605W19N-2600-PCB

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Shopping cart

2496-2690 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2600 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G26H605W19N 2496–2690 MHz, 85 W Avg, 48 V Data Sheet[A5G26H605W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G26H605W19N 2496–2690 MHz, 85 W Avg, 48 V Data Sheet[A5G26H605W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

Design Resources

Design Files

Filter by

A5G26H605W19N Peaking Class AB S-Parameters

A5G26H605W19N Peaking Class C S-Parameters

A5G26H605W19N Carrier Class AB S-Parameters

A5G26H605W19N 2600 MHz PCB DXF file

Filter by

Filter By

A5G26H605W19N Peaking Class AB S-Parameters

A5G26H605W19N Peaking Class C S-Parameters

A5G26H605W19N Carrier Class AB S-Parameters

A5G26H605W19N 2600 MHz PCB DXF file

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2496-2690 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor