A3T23H450W23S|2300-2400 MHz, 87 W Avg, 30 V

Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 30 Vdc, I_DQA = 650 mA, V_GSB = 0.65 Vdc, P_out = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2300 MHz	14.7	47.0	7.8	–30.7
2350 MHz	15.1	46.4	7.6	–31.7
2400 MHz	15.2	46.5	7.5	–33.3

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T23H450W23S 2300-2400 MHz, 87 W Avg, 30 V Data Sheet[A3T23H450W23S]

PDFAug 8, 2018Rev 0

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Models
A3T23H450W23S Carrier S-Parameters

S2PRev 0Aug 8, 201854.8 KBA3T23H450W23S-Carrier

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Models
A3T23H450W23S Peaking Class C S-Parameters

S2PRev 0Aug 8, 201854.9 KBA3T23H450W23S-Peaking-Class-C

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Models
A3T23H450W23S Peaking Class AB S-Parameters

S2PRev 0Aug 8, 201854.8 KBA3T23H450W23S-Peaking-Class-AB

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Printed Circuit Boards and Schematics
A3T23H450W23S 2300 MHz PCB DXF file

ZIPRev 2Aug 8, 201838.4 KBA3T23H450W23S-2300-PCB

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2300-2400 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2300 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T23H450W23S 2300-2400 MHz, 87 W Avg, 30 V Data Sheet[A3T23H450W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T23H450W23S 2300-2400 MHz, 87 W Avg, 30 V Data Sheet[A3T23H450W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A3T23H450W23S Carrier S-Parameters

A3T23H450W23S Peaking Class C S-Parameters

A3T23H450W23S Peaking Class AB S-Parameters

A3T23H450W23S 2300 MHz PCB DXF file

Filter by

Filter By

A3T23H450W23S Carrier S-Parameters

A3T23H450W23S Peaking Class C S-Parameters

A3T23H450W23S Peaking Class AB S-Parameters

A3T23H450W23S 2300 MHz PCB DXF file

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