Design Files
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- No Longer Manufactured
- BGS8U5
SiGe:C Low Noise Amplifier MMIC with Bypass Switch for LTE/5G NR
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The BGS8U5 is a low noise amplifier (LNA) with bypass switch for LTE and 5G NR receiver applications. It is available in a small plastic 6-pin thin leadless package.
The BGS8U5 delivers system-optimized gain for LTE bands 42 and 43 where sensitivity improvement is required. Complete 5G NR bands n77, n78, and n79 are supported. When receive signal strength is sufficient, the BGS8U5 can be switched off to operate in bypass mode. Switching to bypass mode results into an increased IP3i level and supply current in bypass mode at 1 μA. The BGS8U5 requires only one external matching inductor up to 4200 MHz.
The BGS8U5 is optimized for 3300 MHz to 4200 MHz, and with one additional output matching inductor optimized for 4400-5000 MHz.
Product Details
- Operating frequency from 3300 MHz to 5000 MHz
- Noise figure 1.0 dB
- Gain 15 dB
- High input 1 dB compression point -8 dBm
- High in band IP3i 4 dBm
- Bypass switch insertion loss -3.2 dB
- Supply voltage 1.5 V to 3.1 V
- Integrated RF supply decoupling capacitor
- Optimized performance at a supply current 4.7 mA
- Bypass mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Requires only one input matching inductor
- Input and output AC coupled through DC blocking capacitors
- Integrated matching for the output (LTE B42/43, 5G NR n77/n78)
- ESD protection on all pins
- Low bill of materials (BOM)
- 6-pins leadless package; 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level 1
Applications
- LNA for LTE and 5G NR reception in smartphones
- Feature phones
- Tablet PCs
- RF front-end modules
Part numbers include: BGS8U5, OM17034, OM17039.
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