N-channel silicon FET | NXP Semiconductors

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

N-channel asymmetrical planar epitaxial junction Field-Effect Transistor in a SOT23 package.

Product Details

Features

Low feedback capacitance
Low noise

Target Applications

Hybrid thick and thin-film circuits
Radio mixer stage

Documentation

Quick reference to our documentation types.

3 documents

Data Sheet
Archived - N-Channel Silicon Field-Effect Transistors

PDFRev 2.1Dec 2, 2010240.3 KBBF510_511_512_513_CNVEnglish
Package Information
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

PDFRev 1.1Jan 9, 2017200.2 KBSOT23English
Supporting Information
Reflow Soldering Profile

PDFRev 1.0Feb 17, 201434.6 KBREFLOW_SOLDERING_PROFILEEnglish

Design Resources

Design Files

Quick reference to our design files types.

1 design file

Models
S-parameters BF513

ZIPRev 1.0Apr 23, 2019 00:00:005.7 KBSPAR_BF513
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

Support

What do you need help with?

Suggested Links

Ask a question to the NXP Community