Design Files
Receive the full breakdown. See the product footprint and more in the eCad file.
Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service.
|
|
|
|
|
|
---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Quick reference to our documentation types.
3 documents
Please wait while your secure files are loading.
Receive the full breakdown. See the product footprint and more in the eCad file.
Receive the full breakdown. See the product footprint and more in the eCad file.