MOS Model 9 is a physics based analytical model for electrical circuit simulation and design for analogue applications. It provides an excellent description of the electrical characteristics in all relevant regions of transistor operation such as the sub-threshold current, the substrate current and the output conductance.
MOS Model 9 describes transistor behaviour over a wide range of channel lengths and widths using just one parameter set. Thereby making it easy and flexible to use across a broad spectrum of applications, while maintaining consistently high accuracy. The full documentation and source code of MOS Model 9 is freely available from this website.
Initially developed for use with Pstar, the NXP® analogue circuit simulator, MOS Model 9 is suitable for use both in circuit design and process technology, as well as in CAD tool development.
The models are included in a dynamically loaded library called SiMKit. SiMKit is related to the following circuit simulators used within NXP:
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