MOS Model 40 is a physics based transistor model to be used in circuit simulation and IC-design of analogue high-voltage applications processed in Silicon-on-Insulator (SOI). The model describes the electrical behaviour of an accumulation/depletion-type MOSFET in SOI. The model is used as drain extension of high-voltage MOS devices, like the Lateral Double-diffused MOS (LDMOS), the Vertical Double-diffused MOS (VDMOS), and the Extended MOS transistors.
The models are included in a dynamically loaded library called SiMKit. SiMKit is related to the following circuit simulators used within NXP®:
Quick reference to our documentation types.
Please wait while your secure files are loading.