Model 20 | NXP Semiconductors

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MOS Model 20 is an old compact LDMOS model, which combines the MOSFET operation of the channel region with that of the drift region under the thin gate oxide. As such, it was aimed as a successor of MOS model 9 in series with MOS model 31 or MOS model 11 in series with MOS model 31. MOS Model 20 improved the convergence behaviour during simulation, by having the voltage at the transition from the channel region to the drift region calculated inside the model itself. The model has been discontinued after SiMKit 3.8 as newer models have been built within NXP^®.

The models are included in a dynamically loaded library called SiMKit (available until SiMKit 3.8). SiMKit is related to the following circuit simulators used within NXP:

Pstar, the circuit simulator from NXP
Spectre, the circuit simulator from Cadence
ADS, the circuit simulator from Agilent

Documentation

Quick reference to our documentation types.

8 documents

Compact List

Compact Modeling of High-Voltage LDMOS Devices Including Quasi-Saturation[01610925]

PDFOct 30, 2015Rev 1
Capacitance modeling of laterally non-uniform MOS devices - Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International[01419281]

PDFOct 30, 2015Rev 1
MOS model 20, level 2001[M2001]

PDFOct 30, 2015Rev 1
MOS Model 20 Level 2001[PRTN2003_00301]

PDFOct 30, 2015Rev 1
MOS model 20, level 2002[M2002]

PDFOct 30, 2015Rev 1
New Fundamental Insights Into Capacitance Modeling of Laterally Nonuniform MOS Devices[01580864]

PDFOct 30, 2015Rev 1
A Surface-Potential-Based High-Voltage Compact LDMOS Transistor Model[01424392]

PDFOct 30, 2015Rev 1
MOS Model 20 Level 2002.2[PRTN2005_00406]

PDFOct 30, 2015Rev 1

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Model 20

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Supporting Information (8)

Compact Modeling of High-Voltage LDMOS Devices Including Quasi-Saturation[01610925]

Capacitance modeling of laterally non-uniform MOS devices - Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International[01419281]

MOS model 20, level 2001[M2001]

MOS Model 20 Level 2001[PRTN2003_00301]

MOS model 20, level 2002[M2002]

New Fundamental Insights Into Capacitance Modeling of Laterally Nonuniform MOS Devices[01580864]

A Surface-Potential-Based High-Voltage Compact LDMOS Transistor Model[01424392]

MOS Model 20 Level 2002.2[PRTN2005_00406]