MRF6VP121KH|1000 W Pulse, 965-1215 MHz, 50 V | NXP Semiconductors

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965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

MRF6VP121KH
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

Product Details

Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20 dB
    Drain Efficiency: 56%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel

    • NOTE: PARTS ARE PUSH–PULL

N true 0 PSPMRF6VP121KHen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 3 English RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. 1244042769250715764301 PSP 1.3 MB None None documents None 1244042769250715764301 /docs/en/data-sheet/MRF6VP121KH.pdf 1268572 /docs/en/data-sheet/MRF6VP121KH.pdf MRF6VP121KH documents N N 2016-10-31 ARCHIVED - MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF6VP121KH.pdf /docs/en/data-sheet/MRF6VP121KH.pdf Data Sheet N 980000996212993340 2024-02-14 pdf N en Apr 28, 2010 980000996212993340 Data Sheet Y N ARCHIVED - MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs false 0 MRF6VP121KH downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MRF6VP121KH.pdf 2016-10-31 1244042769250715764301 PSP 1 Apr 28, 2010 Data Sheet RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. None /docs/en/data-sheet/MRF6VP121KH.pdf English documents 1268572 None 980000996212993340 2024-02-14 N /docs/en/data-sheet/MRF6VP121KH.pdf ARCHIVED - MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRF6VP121KH.pdf documents 980000996212993340 Data Sheet N en None Y pdf 3 N N ARCHIVED - MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs 1.3 MB MRF6VP121KH N 1244042769250715764301 true Y Products

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