- No Longer Manufactured
- MRF6VP121KH
965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
Product Details
Features
- Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
- Power Gain: 20 dB
- Drain Efficiency: 56%
- Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push-Pull Operation
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
NOTE: PARTS ARE PUSH–PULL
Documentation
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