965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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Product Details

Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20 dB
    Drain Efficiency: 56%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel

  • NOTE: PARTS ARE PUSH–PULL

Documentation

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