- No Longer Manufactured
- MRF8S9260H
920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S9260HR3 and MRF8S9260HSR3 are designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 18.8 | 36.0 | 6.3 | –39.5 |
| 940 MHz | 18.7 | 37.0 | 6.2 | –38.6 |
| 960 MHz | 18.6 | 38.5 | 5.9 | –37.1 |
- Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
Documentation
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