- No Longer Manufactured
- MRF8S9100H
920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S9100HR3 and MRF8S9100HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Tables
900 MHz
Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW| Frequency | Gps (dB) |
ηD (%) |
| 920 MHz | 19.3 | 51.6 |
| 940 MHz | 19.3 | 52.9 |
| 960 MHz | 19.1 | 54.1 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 108 Watts CW
900 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.| Frequency | Gps (dB) |
ηD (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 920 MHz | 19.1 | 43 | –64.1 | –74.5 | 1.8 |
| 940 MHz | 19.1 | 44 | –63.6 | –74.6 | 2.0 |
| 960 MHz | 19.0 | 45 | –62.8 | –75.1 | 2.3 |
Documentation
Quick reference to our documentation types.