920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor | NXP Semiconductors

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920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor

AFT09S200W02S
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The AFT09S200W02SR3 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 920 to 960 MHz.

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RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
920 MHz19.634.16.9–35.2–28
940 MHz19.634.77.0–35.4–18
960 MHz19.435.66.8–34.7–12
N true 0 PSPAFT09S200W02Sen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English AFT09S200W02S 56 W RF power LDMOS transistor for cellular base station applications requiring very wide instantaneous bandwidth in the 920-960 MHz band 1429827441887690873265 PSP 533.8 KB None None documents None 1429827441887690873265 /docs/en/data-sheet/AFT09S200W02S.pdf 533774 /docs/en/data-sheet/AFT09S200W02S.pdf AFT09S200W02S documents N N 2016-10-31 ARCHIVED - AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/AFT09S200W02S.pdf /docs/en/data-sheet/AFT09S200W02S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Apr 23, 2015 980000996212993340 Data Sheet Y N ARCHIVED - AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet false 0 AFT09S200W02S downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/AFT09S200W02S.pdf 2016-10-31 1429827441887690873265 PSP 1 Apr 23, 2015 Data Sheet AFT09S200W02S 56 W RF power LDMOS transistor for cellular base station applications requiring very wide instantaneous bandwidth in the 920-960 MHz band None /docs/en/data-sheet/AFT09S200W02S.pdf English documents 533774 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT09S200W02S.pdf ARCHIVED - AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/AFT09S200W02S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet 533.8 KB AFT09S200W02S N 1429827441887690873265 true Y Products

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