920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

Roll over image to zoom in

Product Details

Select a section:

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz19.336.56.0–36.6
940 MHz19.136.16.1–36.7
960 MHz18.936.06.0–36.1
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 177 Watts CW

Documentation

Quick reference to our documentation types.

Support

What do you need help with?