- No Longer Manufactured
- MRF8P9300H
920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8P9300HR6 and MRF8P9300HSR6 are designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 19.6 | 35.4 | 6.0 | –37.3 |
| 940 MHz | 19.6 | 35.6 | 6.0 | –37.1 |
| 960 MHz | 19.4 | 35.8 | 5.9 | –36.7 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 326 Watts CW
800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 865 MHz | 20.5 | 35.2 | 6.0 | –36.1 |
| 880 MHz | 20.7 | 36.0 | 6.0 | –36.1 |
| 895 MHz | 20.6 | 37.0 | 6.0 | –35.8 |
Documentation
Quick reference to our documentation types.