869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Products
No Longer Manufactured
MRF5S9080N

Roll over image to zoom in

The MRF5S9080NR1 and MRF5S9080NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications

Data Sheet

Documentation

Quick reference to our documentation types.

1 documents

^{Data Sheet}
ARCHIVED - MRF5S9080NR1 MRF5S9080NBR1 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

PDFRev 1May 31, 2006774.1 KBMRF5S9080NEnglish

869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Documentation

Filter by

ARCHIVED - MRF5S9080NR1 MRF5S9080NBR1 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Support

What do you need help with?

Suggested Links