- No Longer Manufactured
- MRF8S9120N
865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S9120NR3 is designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 20.1 | 34.6 | 6.3 | –37.2 |
| 940 MHz | 20.0 | 34.3 | 6.3 | –37.3 |
| 960 MHz | 19.8 | 34.2 | 6.3 | –37.4 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 865 MHz | 20.8 | 35.0 | 6.2 | –37.1 |
| 880 MHz | 20.8 | 35.0 | 6.2 | –37.5 |
| 895 MHz | 20.6 | 34.8 | 6.2 | –38.0 |
Documentation
Quick reference to our documentation types.