MRFE6S9125N|865-960 MHz, 27 W Avg, 28 V

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MRFE6S9125N

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The MRFE6S9125NR1 and MRFE6S9125NBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

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^{Data Sheet}
ARCHIVED - MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

PDFRev 0Oct 19, 2007608.3 KBMRFE6S9125NEnglish

865-960 MHz, 27 W Avg., 28 V, N-CDMA, GSM EDGE RF Power LDMOS Transistors

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ARCHIVED - MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

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