MRFE6S9125N|865-960 MHz, 27 W Avg, 28 V

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Products
No Longer Manufactured
MRFE6S9125N

Roll over image to zoom in

The MRFE6S9125NR1 and MRFE6S9125NBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

Data Sheet

Documentation

Quick reference to our documentation types.

1 documents

Data Sheet
ARCHIVED - MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

PDFRev 0Oct 19, 2007608.3 KBMRFE6S9125NEnglish

865-960 MHz, 27 W Avg., 28 V, N-CDMA, GSM EDGE RF Power LDMOS Transistors

Documentation

Filter by

ARCHIVED - MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

Support

What do you need help with?

Suggested Links