864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

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The MRFE6S8046NR1 and MRFE6S8046GNR1 are designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.

Data Sheet

Application Notes

Documentation

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5 documents

Data Sheet
MRFE6S8046NR1, MRFE6S8046GNR1 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

PDFRev 0May 6, 2009450.5 KBMRFE6S8046NEnglish
Application Note
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
Application Note
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
Package Information
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins

PDFRev EMar 17, 201675.2 KBSOT1736-2English
Package Information
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins

PDFRev FJan 18, 201675.9 KBSOT1736-1English

Design Resources

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864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

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MRFE6S8046NR1, MRFE6S8046GNR1 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins

98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins

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Design Files

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