- No Longer Manufactured
- MRF8P8300H
790-820 MHz, 96 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8P8300HR6 and MRF8P8300HSR6 are designed for W-CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
790-820 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 790 MHz | 20.9 | 35.2 | 6.2 | –38.1 |
| 805 MHz | 21.0 | 35.5 | 6.2 | –38.1 |
| 820 MHz | 20.9 | 35.7 | 6.1 | –38.2 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 340 Watts CW
Documentation
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