- No Longer Manufactured
- AFT09S200W02N
716-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistors
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The AFT09S200W02NR3 and AFT09S200W02GNR3 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz.
Product Details
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 920 MHz | 19.2 | 34.0 | 6.9 | –35.7 | –25 |
| 940 MHz | 19.3 | 35.1 | 7.0 | –36.0 | –20 |
| 960 MHz | 19.2 | 36.5 | 6.8 | –34.8 | –13 |
700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 716 MHz | 22.7 | 37.5 | 6.9 | –34.7 | –18 |
| 722 MHz | 22.6 | 37.2 | 6.9 | –34.6 | –19 |
| 728 MHz | 22.5 | 36.9 | 6.9 | –34.6 | –18 |
Documentation
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