- No Longer Manufactured
- MRF8S7170N
618-803 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MRF8S7170NR3 is designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Product Details
RF Performance Table
700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 728 MHz | 19.7 | 37.1 | 6.2 | –38.7 |
| 748 MHz | 19.5 | 37.0 | 6.1 | –37.5 |
| 768 MHz | 19.4 | 37.9 | 6.1 | –37.8 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 182 Watts CW
Documentation
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