- No Longer Manufactured
- MMRF1018N
470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MMRF1018NR1 and MMRF1018NBR1 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.
Product Details
RF Performance Tables
860 MHz Narrowband
Typical Performance (Narrowband Test Circuit): VDD = 50 Vdc, IDQ = 350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
ACPR (dBc) |
| DVB-T (8k OFDM) | 18 Avg. | 860 | 22.0 | 28.5 | –62.0 |
470-860 MHz Broadband
Typical Performance (Broadband Reference Circuit): VDD = 50 Vdc, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
Output Signal PAR (dB) |
IMD Shoulder (dBc) |
| DVB-T (8k OFDM) | 18 Avg. | 470 | 21.6 | 26.8 | 8.6 | –31.8 |
| 650 | 22.9 | 28.0 | 8.7 | –34.4 | ||
| 860 | 21.9 | 28.3 | 7.9 | –29.2 |
Documentation
Quick reference to our documentation types.