MMRF1018N|470-860 MHz, 90 W, 50 V | NXP Semiconductors

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470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

MMRF1018N
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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The MMRF1018NR1 and MMRF1018NBR1 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.

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RF Performance Tables

860 MHz Narrowband

Typical Performance (Narrowband Test Circuit): VDD = 50 Vdc, IDQ = 350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)		 ACPR
(dBc)
DVB-T (8k OFDM)18 Avg.86022.028.5–62.0

470-860 MHz Broadband

Typical Performance (Broadband Reference Circuit): VDD = 50 Vdc, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)		 Output
Signal PAR
(dB)		 IMD Shoulder
(dBc)
DVB-T (8k OFDM)18 Avg. 47021.626.88.6–31.8
65022.928.08.7–34.4
86021.928.37.9–29.2
N true 0 PSPMMRF1018Nen 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English The MMRF1018NR1 and MMRF1018NBR1 are 90 W RF power LDMOS transistors and are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz. 1406323718370724255934 PSP 750.0 KB None None documents None 1406323718370724255934 /docs/en/data-sheet/MMRF1018N.pdf 749977 /docs/en/data-sheet/MMRF1018N.pdf MMRF1018N documents N N 2016-10-31 ARCHIVED - MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MMRF1018N.pdf /docs/en/data-sheet/MMRF1018N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 24, 2014 980000996212993340 Data Sheet Y N ARCHIVED - MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet false 0 MMRF1018N downloads en true 1 Y PSP Data Sheet 1 /docs/en/data-sheet/MMRF1018N.pdf 2016-10-31 1406323718370724255934 PSP 1 Jul 24, 2014 Data Sheet The MMRF1018NR1 and MMRF1018NBR1 are 90 W RF power LDMOS transistors and are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz. None /docs/en/data-sheet/MMRF1018N.pdf English documents 749977 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1018N.pdf ARCHIVED - MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MMRF1018N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N ARCHIVED - MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet 750.0 KB MMRF1018N N 1406323718370724255934 true Y Products

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