450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs | NXP Semiconductors

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450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

MW6S010M

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Replaced by MW6S010NR1(GNR1). There are no form, fit or function changes with this part replacement.

The MW6S010MR1 and MW6S010GMR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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