- No Longer Manufactured
- A2T27S007N
400-2700 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The A2T27S007NT1 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
Product Details
RF Performance Tables
2100 MHz
Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ = 50 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 2110 MHz | 22.0 | 22.8 | 9.5 | –42.8 | –9 |
| 2140 MHz | 21.9 | 22.5 | 9.4 | –43.1 | –11 |
| 2170 MHz | 21.8 | 22.8 | 9.5 | –43.5 | –11 |
| 2200 MHz | 21.2 | 22.4 | 9.3 | –43.8 | –9 |
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 60 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 24.4 | 23.5 | 9.4 | –41.3 | –6 |
| 1840 MHz | 24.8 | 24.5 | 8.9 | –41.8 | –10 |
| 1880 MHz | 24.3 | 24.8 | 8.8 | –42.2 | –9 |
1 documents
Data Sheet (1)
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