MMZ09312B|400-1000 MHz, 31.7 dB, Amplifier

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The MMZ09312BT1 is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee® at operating voltages from 3 to 5 Volts.

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Data Sheet

Application Notes

Product Details

Features

Frequency: 400-1000 MHz
P1dB: 29.6 dBm @ 900 MHz
Power Gain: 31.7 dB @ 900 MHz
OIP3: 42 dBm @ 900 MHz
Active Bias Control (adjustable externally)
Single 3 to 5 Volt Supply
Performs Well with Digital Predistortion Systems
Single-ended Power Detector
Cost-effective 12-pin, 3 mm QFN Surface Mount Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.

Part numbers include: MMZ09312B.

RF Performance Table

CDMA, LTE, Zigbee Performance

Typical Performance: V_CC1 = V_CC2 = V_BIAS = 5 Vdc, I_CQ = 74 mA

Frequency	Pout (dBm)	G_ps (dB)	ACPR (dBc)	PAE (%)	Test Signal
900 MHz	24	31.5	–50.0	26.0	IS-95 CDMA
900 MHz	18.0	31.5	–50.0	10.8	1C W-CDMA TM1
900 MHz	17.0	31.5	–50.0	9.0	10 MHz LTE TM1.1
750 MHz	17.5	32.0	–50.0	15.3	LTE 10/20 MHz
450 MHz	29	33.0	–40.0	57.0	ZigBee

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
Archived - MMZ09312BT1 400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier Data Sheet

PDFRev 2Jan 15, 20151.4 MBMMZ09312BEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Package Information}
98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85)

PDFRev ANov 30, 2017279.5 KBSOT1677-1English

Design Resources

Design Files

Quick reference to our design files types.

3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MMZ09312BT1 S-Parameters for 3.3V

S2PRev 0Nov 4, 2011 00:00:0068.4 KBMMZ09312B_3.3V_SP
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^Models
MMZ09312BT1 S-Parameters for 5V

S2PRev 0Nov 4, 2011 00:00:0068.4 KBMMZ09312B_5V_SP
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^{Printed Circuit Boards and Schematics}
QFN 3x3-12M CAD DXF File

ZIPRev 0Nov 4, 2011 00:00:00344.7 KBQFN_3X3_12M_DXF_PCB
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400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier

Product Details

Features

RF Performance Table

CDMA, LTE, Zigbee Performance

Buy/Parametrics

Documentation

Filter by

Archived - MMZ09312BT1 400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85)

Design Resources

Design Files

Filter by

MMZ09312BT1 S-Parameters for 3.3V

MMZ09312BT1 S-Parameters for 5V

QFN 3x3-12M CAD DXF File

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