3400-3600 MHz, 5 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers | NXP Semiconductors

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The MW7IC3825NR1, MW7IC3825NBR1 and MW7IC3825GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 3400–3600 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.

Application Notes

Documentation

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1-5 of 8 documents

Data Sheet
MW7IC3825NR1, MW7IC3825GNR1, MW7IC3825NBR1, 3400-3600 MHz, 5 W AVG., 28 V WiMAX, RF LDMOS Wideband Integrated Power Amplifiers

PDFRev 1Nov 24, 20101.2 MBMW7IC3825NEnglish
Application Note
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
Application Note
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Jun 7, 20068.3 MBAN3263English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
Package Information
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins

PDFRev DMar 21, 201679.3 KBSOT1726-1English
Package Information
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins

PDFRev RFeb 29, 201681.8 KBSOT1727-1English
Package Information
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing

PDFRev AAug 31, 200761.2 KBSOT1723-1English

Design Resources

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