The A2G35S200-01SR3 40 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.
Part numbers include: A2G35S200-01S.
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 3400 MHz | 14.7 | 32.4 | 7.2 | –34.9 | –10 |
| 3500 MHz | 16.1 | 35.3 | 7.0 | –34.7 | –19 |
| 3600 MHz | 16.1 | 36.7 | 6.6 | –32.8 | –9 |
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Quick reference to our documentation types.
2 design files
Receive the full breakdown. See the product footprint and more in the eCad file.