The A2G35S160-01SR3 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.
Part numbers include: A2G35S160-01S.
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 3400 MHz | 15.6 | 37.2 | 7.0 | –33.6 | –16 |
| 3500 MHz | 15.7 | 36.7 | 7.2 | –34.1 | –16 |
| 3600 MHz | 15.9 | 38.9 | 7.2 | –33.2 | –13 |
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Quick reference to our documentation types.
2 design files
Receive the full breakdown. See the product footprint and more in the eCad file.