A3G35H100-04S|Airfast RF Power GaN Transistor | NXP Semiconductors

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3400-3600 MHz, 14 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G35H100-04S Active
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

The A3G35H100-04SR3 14 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600 MHz.

This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

RF Performance Table

3500 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 80 mA, VGSB = –5.0 Vdc, Pout = 14 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
3400 MHz14.043.89.6–34.0
3500 MHz14.041.49.7–34.5
3600 MHz14.042.59.6–32.2

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