300 W CW over 2400-2500 MHz, 32 V RF Power LDMOS Transistor

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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Features

  • Characterized with series equivalent large-signal impedance parameters
  • Internally matched for ease of use
  • Qualified for operation at 32 Vdc
  • Integrated ESD protection
  • Low thermal resistance
  • RoHS Compliant
  • Industrial heating:
    • Sterilization
    • Pasteurization
  • Industrial drying
  • Moisture-leveling process
  • Curing
  • Welding
  • Heat sealing
  • Microwave ablation
  • Renal denervation
  • Diathermy

RF Performance Tables

Typical Performance

In 2400-2500 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
2450CW15.913.160.5320

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450 1CW> 5:1
at all Phase Angles
15.0
(2 dB Overdrive)
32No Device Degradation
1. Measured in 2450 MHz reference circuit.

Documentation

Quick reference to our documentation types.

1 documents

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